Title of article
Properties of Mg2Si (100) surfaces: A first-principles study
Author/Authors
Liao، نويسنده , , J.N. and Li، نويسنده , , K. and Wang، نويسنده , , F. and Zeng، نويسنده , , X.S. and Zhou، نويسنده , , N.G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
6
From page
41
To page
46
Abstract
The Mg2Si (100) surfaces were studied using first-principles method based on the density functional theory (DFT) to explore the surface properties. It is demonstrated that eleven-layers for Mg-terminated surfaces and nine-layers for Si-terminated surfaces all converged well. The surface relaxation indicates that the effects of relaxation are mainly localized within the top three atomic layers for both terminations. The calculation results of surface energies show that Mg-terminated surfaces are more stable than Si-terminated surfaces. The electronic structure not only reveals the metallic feature for the Mg-terminated surfaces and semiconducting property for the Si-terminated surfaces, but also indicates the existence of covalent bonding in Mg2Si (100) surfaces.
Keywords
A. Mg2Si (100) surfaces , D. Surface relaxation , E. First-principles , C. Surface electronic structure
Journal title
Solid State Communications
Serial Year
2014
Journal title
Solid State Communications
Record number
1794736
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