Title of article :
An extended Hückel study of the electronic properties of III–V compounds and their alloys
Author/Authors :
Ribeiro، نويسنده , , Ingrid A. and Ribeiro، نويسنده , , Fabio J. and Martins، نويسنده , , A.S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2014
Abstract :
In this work, we performed tight binding calculations of the electronic structure of III–V semiconductors compounds and their alloys based on the Extended Hückel Theory (EHT). In particular, this paper is focused on the dependency between band gap and the applied pressure and also the alloy composition.
Keywords :
A. Semiconductors , D. Electronic band structure , E. High pressure , E. Strain
Journal title :
Solid State Communications
Journal title :
Solid State Communications