Structural and electrical characterization of intrinsic n-type In2O3 nanowires

We synthesized high-quality single-crystalline indium oxide nanowires using gold catalytic vapor–liquid–solid growth and characterized their electrical properties with field effect transistor structures. The grown indium oxide nanowires are non-stoichiometric with In:O composition ratio of 1:1.24 due to oxygen vacancies from X-ray photoelectron spectroscopic study. These oxygen vacancies act as donors in indium oxide nanowires. The field effect transistors based on these nanowires exhibited good transistor characteristics with well-defined linear and saturation regions with on/off ratios as high as 3 × 104 at drain bias 0.1 V, electron carrier density of 3.7 × 1017 cm−3 and an electron mobility of 85 cm2/V s.