Chemical composition of InAlAs oxides grown on In0.52Al0.48As epilayer lattice matched to InP substrate

This paper represents a chemical composition of InAlAs oxides lattice matched on In0.52Al0.48As epilayer to InP substrate. The thickness of MBE grown In0.52Al0.48As epilayer was about 1.7 μm on thick InP(1 0 0) substrates. Oxides roughness, surface morphology, chemical composition of oxides interface and depth profiles were characterized by atomic force microscopy (AFM), energy-dispersive X-ray (EDX), and secondary ion mass spectrometry (SIMS) techniques. ‘In’- and ‘As’- rich chemical compositions were obtained at the strain-free oxidation region than the other chemical elements. All these chemical investigations were confirmed by various surface analytical techniques which lead to understand the compositions of strain-relaxed oxidation at the interface between lattice-matched InAlAs epilayer and InP substrate.