Raman study of titanium oxide layers produced with plasma immersion ion implantation

Raman spectroscopy was used to study thin titanium oxide (TiO2)layers obtained by oxygen plasma immersion ion implantation (PIII) at rather low temperatures between 265 and 550°C. A pulse voltage of −30 kV and different pulse numbers between 5×105 and 4×106 were used. The phase composition was investigated with Raman spectroscopy, showing that rutile is present for all temperatures and doses used in this investigation. The results were corroborated with glancing angle X-ray diffraction (XRD). The grain size, as determined by scanning electron microscopy (SEM), changed from 40–100 to 10–30 nm when the temperature was decreased from 430 to 380°C. The retained dose and the layer thickness were determined by elastic recoil detection (ERD), yielding an incident dose of 6×1011 oxygen atoms per pulse and a maximum layer thickness beyond 100 nm.