Excitation frequency dependence of the optical emission intensity vs. deposition rate relationship in silane plasmas

The relationship between the optical emission intensity (Isi*) and the deposition rate (DR) of hydrogenated amorphous silicon thin films has been investigated in silane plasmas under various plasma conditions. We have indicated that the integrated value of Isi* should be used by taking into account the distance of the Isi*-measuring positions from the substrate surface for studying the optical emission intensity–DR relationship. One-to-one correspondence between the integrated value of Isi* and the DR has been obtained under various plasma conditions when keeping the electron temperature in the plasma constant. We have proposed a prediction method in the variation of the slope of the integrated value of Isi*–DR relationship by measuring the emission intensity ratio of Isi*/IsiH* for plasmas showing different electron temperatures.