Structural characteristics of boron nitride thin films synthesized by the technique of unequal-potential hollow-cathode effect

Boron nitride thin films were synthesized on Si(100) substrates in (5% B2H6+He)/N2/H2 gas mixtures by the technique of unequal-potential hollow-cathode effect (UPHCE). Because of the electric current magnification function of UPHCE, the reactive gas mixture (N2, B2H6, etc.) was activated and ionized effectively. The structure characteristics of the films were investigated by X-ray diffraction (XRD) and infrared reflection absorption spectroscopy (IRAS). Results show that the phases of BN thin films, which contain cBN phase and hBN phase, are changed with the difference of the flow ratio of reactive gases.