Title of article :
GROWTH OF ZnS SINGLE CRYSTALS BY CVT TECHNIQUE UNDER DIFFERENT MASS TRANSPORT STABILITY CONDITIONS
Author/Authors :
Tafreshi، M. J. نويسنده Physics Department, Faculty of Science, Semnan University, Semnan, Iran. , , Dibaie، B. نويسنده Physics Department, Faculty of Science, Semnan University, Semnan, Iran. , , Fazli، M. نويسنده ,
Issue Information :
فصلنامه با شماره پیاپی 33 سال 2012
Pages :
11
From page :
51
To page :
61
Abstract :
A thermodynamic model was used to find out the optimum temperature for the growth of ZnS single crystals in closed ampoules by chemical vapor transport technique. Based on this model 1002 °C was found to be optimum temperature for 2 mg/cm3 concentration of transporting agent (iodine). ZnS Crystals were grown in optimum (1002 °C) and non-optimum (902 °C and 1102 °C) temperatures. The composition structure and microstructure of the grown crystals were studied by Atomic absorption spectroscopy, X-ray diffraction and Scanning electron microscopy measurements. Properties of the grown crystals were correlated to the growth conditions especially a stability in mass transport along the closed tube length.
Journal title :
Iranian Journal of Materials Science and Engineering
Serial Year :
2012
Journal title :
Iranian Journal of Materials Science and Engineering
Record number :
1801611
Link To Document :
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