Title of article :
Laser-assisted deposition of r-B4C coatings using ethylene as carbon precursor
Author/Authors :
Santos، نويسنده , , M.J. and Silvestre، نويسنده , , A.J. and Conde، نويسنده , , O.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
Rhombohedral B4C coatings were synthesised on fused silica substrates by CO2 laser-assisted chemical vapour deposition (LCVD) using a dynamic reactive atmosphere of BCl3, C2H4 and H2. Films with carbon content from 15 to 22 at.% were grown at deposition rates as high as 0.12 μm s−1. The kinetics of the reactive system used to deposit the B4C films and the influence of growth conditions on the structure and morphology of the deposits were investigated.
Keywords :
Rhombohedral boron carbide (r-B4C) , Laser-CVD , Growth kinetics
Journal title :
Surface and Coatings Technology
Journal title :
Surface and Coatings Technology