Title of article
Laser-assisted deposition of r-B4C coatings using ethylene as carbon precursor
Author/Authors
Santos، نويسنده , , M.J. and Silvestre، نويسنده , , A.J. and Conde، نويسنده , , O.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
160
To page
164
Abstract
Rhombohedral B4C coatings were synthesised on fused silica substrates by CO2 laser-assisted chemical vapour deposition (LCVD) using a dynamic reactive atmosphere of BCl3, C2H4 and H2. Films with carbon content from 15 to 22 at.% were grown at deposition rates as high as 0.12 μm s−1. The kinetics of the reactive system used to deposit the B4C films and the influence of growth conditions on the structure and morphology of the deposits were investigated.
Keywords
Rhombohedral boron carbide (r-B4C) , Laser-CVD , Growth kinetics
Journal title
Surface and Coatings Technology
Serial Year
2002
Journal title
Surface and Coatings Technology
Record number
1803266
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