Ion beam synthesis of α-CNx:H films

Hydrogenated amorphous carbon nitride (α-CNx:H) films (100–200 nm) were grown by direct ion beam deposition on Si(100) substrates. Ion beams have been produced by electrostatic ion sources from C6H14+H2+N2 gas mixtures. The influence of N2/C6H14+H2+N2 gas ratio (N2 concentration) on structure and properties of α-CNx:H films was investigated. The increase of N2 concentration in the gas mixture resulted in decrease of sp3 bonding and formation of the more graphite-like α-CNx:H films. Growth rate and refractive index of formed α-CNx:H films decreased with increasing N2 concentration. A slight decrease of wear resistance (<20%) of the formed films with higher nitrogen ratio was also observed.