Nanostructured CoSi2 layers formed on Si with high density Co+ ion beams

Irradiation of Si wafers with high density (up to 100 μA/cm2) Co+ ion beams with energies 80 and 180 keV leads to the following effects: (1) Nanoscale structures created on Si surface consist of parallel situated CoSi2 lines with dimensions: width ∼100 nm, length—some micrometers (nano-dimensional structures). (2) Depth distribution of this new phase (CoSi2) depends on the density of the beam: the profile of distribution can be shifted to irradiated surface or in the opposite direction. These data were obtained by means of atomic force microscopy and secondary ion beam mass spectroscopy techniques. We consider that creation of linear structures on the surface of wafers is connected with self-organization processes during the formation of new phase. Possible mechanisms of profile shift are discussed.