Preferential orientation of high permittivity TiO2 deposited on Si wafers by an IBAD technique

Titanium oxide films were deposited on (1 0 0) silicon wafers using an ion beam assisted deposition technique consisting of an electron beam evaporator for Ti evaporation and a microwave ion source for ionizing oxygen gas. The O ions were accelerated to energies of 0.5–2.0 keV. The intensity of the O ion beam was 0.01 mA/cm2 on the substrate. The deposited TiO2 films were rutile O-deficient TiO2 crystals preferentially oriented in the 〈1 1 0〉 direction with very high permittivity values approximately (100–160) ε0. The permittivity increased with increasing 〈1 1 0〉 orientation texture.