Author/Authors :
Kim، نويسنده , , Je-deok and Lee، نويسنده , , Kyung-hwang and Kim، نويسنده , , Kyu-young and Sugimura، نويسنده , , Hiroyuki and Takai، نويسنده , , Osamu and Wu، نويسنده , , Yunying and Inoue، نويسنده , , Yasushi، نويسنده ,
Abstract :
Hydrogenated amorphous carbon (a-C:H) films have been prepared by r.f. plasma-enhanced chemical vapor deposition at low bias voltage from 0 to −40 V with CH4 and H2 as raw materials. The a-C:H films deposited with no bias applied showed characteristics of polymeric films with a large fluorescence level while the a-C:H films deposited at a bias voltage of r.f. 150 W showed characteristics from diamond-like carbon to graphitic nature with a significantly reduced fluorescence level. High water-repellency of over 140° in a contact angle obtained at a-C:H/trimetylmethoxysilane/Si structures. This high water-repellency is due to CH groups on surfaces and the roughness.
Keywords :
a-C:H film , Water-repellency , Surface groups , Surface roughness , PECVD