Properties of Ti1−xSixNy films deposited by concurrent cathodic arc evaporation and magnetron sputtering

A new technique is described in the synthesis of thin films of Ti1−xSixNy based on the concurrent reactive deposition of Ti produced by a cathodic arc source and Si produced by a d.c. magnetron sputter source. The technique permits the controllable doping of TiN with silicon over the range of 1–16 at.%. The films were found to have a microhardness of 70 GPa with a compressive stress of 5.5 GPa when deposited with a magnetron power of 220 W and a bias voltage of −150 V, and a maximum hardness of 58 GPa and stress values of approximately 3.3 GPa when deposited using 280 W magnetron power and −50 V bias. The hardness and stress of TiN was found to be 26 and 3.5 GPa, respectively, when deposited in the absence of the magnetron.