Production of Cr–N films by ion beam-assisted deposition technology: experiment and computer simulation

The results of experimental and theoretical study of Cr–N films deposition by ion beam-assisted deposition (IBAD) are presented; the structure and electrical–physical properties of the initial stage of coating formation are studied. The experiments were carried out with ion energies of 15 and 30 keV and ion current density 25 μA/cm2. The residual gases effect on the film structure is investigated. It is found that oxygen atoms captured from chamber residual atmosphere induces the precipitate Cr2O3 formation on the initial stage of deposition. The radiation-stimulated coalescence of such precipitates occurs in the irradiated films with the increase of condensate thickness. Formation of fine-grained Cr2N precipitates in the irradiated films is observed. The coating thickness for such precipitate formation depends on the ion beam energy. At energies 30 keV fine-grained p Cr2N recipitates are observed for a thickness higher than 70 nm. The performed computer simulation of IBAD demonstrated the good correspondence of calculated and experimental data. It allows to use the computer calculated data to predict the nitrogen distribution in condensed films.