Title of article
Annealing effect on ITO thin films prepared by microwave-enhanced dc reactive magnetron sputtering for telecommunication applications
Author/Authors
Meng، نويسنده , , Li-Jian and Placido، نويسنده , , Frank، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
7
From page
44
To page
50
Abstract
Indium-tin oxide (ITO) thin films were deposited on glass substrates at two different oxygen partial pressures (3.8×10−4 and 1.2×10−3 mbar). After the deposition, these films were annealed for 30 min in air at 200 °C and 400 °C, respectively. The effect of these post-deposition treatments on the structural, electrical and optical properties of ITO thin films has been studied. It has been found that annealing at 200 °C is suitable for improving the properties of these ITO films.
Keywords
Transparent conducting oxide films , TELECOMMUNICATION , Indium-tin oxide (ITO) , Microwave-enhanced reactive magnetron sputtering , Annealing
Journal title
Surface and Coatings Technology
Serial Year
2003
Journal title
Surface and Coatings Technology
Record number
1805205
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