Formation and characterization of BN films with Ti added

Boron nitride films with Ti added (BN:Ti) were prepared by a dual-ion beam sputtering method. The properties of the films were investigated by Fourier transform infrared spectrophotometer (FT-IR), electron spectroscopy for chemical analysis, X-ray diffractometer and the nano-indentation method. The structure of the BN:Ti films changed from the cubic phase to the hexagonal phase at more than 14.8 at.% added Ti. The internal stress and hardness decreased with an increase in the Ti content. With the reduction of the internal stress, the FT-IR absorption bands near 1100 cm−1 related to the cubic boron nitride phase changed to lower wavenumber. Added Ti atoms formed TiB2 and TiN in the films with a small amount of Ti content, but with increasing Ti content, mainly TiN was formed.