Author/Authors :
Wang، نويسنده , , S.G. and Zhang، نويسنده , , Qing and Yoon، نويسنده , , S.F. and Ahn، نويسنده , , J. and Zhou، نويسنده , , Q. and Wang، نويسنده , , Q. and Yang، نويسنده , , D.J. and Li، نويسنده , , J.Q. and Zhang Shanyong، نويسنده , , Sam، نويسنده ,
Abstract :
In this paper, electron field emission properties of nano-diamond films, which were prepared using either CH4/H2/N2 or CH4/Ar microwave plasma enhanced chemical vapor deposition, were studied. X-ray photoelectron spectroscopy detection indicates that nitrogen was incorporated into the nano-diamond film grown in CH4/H2/N2 mixture. This nano-diamond film shows a very low threshold electric field of 2.2 V/μm and a high emission current density of 720 μA/cm2 at applied field of 6.4 V/μm. Nitrogen incorporation, high grain boundary density and sp2-bonded non-diamond components in the films are believed to be responsible for the electron emission enhancement.
Keywords :
electron field emission , Electron emitter , Nano-diamond film , MPECVD
