Title of article :
Initial growth stage evaluation of high-quality diamond films synthesized by the chamber flame method
Author/Authors :
Takeuchi، نويسنده , , Sadao and Murakawa، نويسنده , , Masao and Komaki، نويسنده , , Kunio، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
277
To page :
280
Abstract :
The crystallinity of 5-μm-thick polycrystalline and single-crystal diamond films, which was synthesized by the chamber flame method, was evaluated by means of cathodeluminescence spectral analysis. Crystal defects are found in the initial growth grains in the polycrystalline diamond films. However, defect-free high-quality single-crystalline diamond films can be synthesized at the rate of approximately 20 μm/h in the case of homoepitaxial growth.
Keywords :
Homoepitaxial film , High-quality diamond , Chamber flame , Cathodeluminescence , Crystal defects
Journal title :
Surface and Coatings Technology
Serial Year :
2003
Journal title :
Surface and Coatings Technology
Record number :
1805639
Link To Document :
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