Peeling analysis of resist line pattern of 170 nm width due to crack formation by using atomic force microscope tip

A quantitative analysis of the dependency of the line pattern peeling on the load position is carried out by using an atomic force microscopy tip. The load for pattern peeling F decreases as approaching the load position to the pattern edge, therefore, the pattern edge of the line pattern is more likely to peel. The internal stress and its distribution of the line resist pattern due to crack generation is simulated by the three-dimensional finite element method (3D-FEM) as comparing with the experimental results. By the crack generation, the load Fs simulated for pattern peeling by the 3D-FEM decreases as the comparison with no crack model. The simulated results of the load position dependency is similar to the experimental results. In combination with the stress analysis, the peeling mechanism of micro structure accompanying with crack generation can be clarified.