• Title of article

    Deposition of carbon nitride films by an electron-beam-excited plasma sputtering method

  • Author/Authors

    Ban، نويسنده , , Masahito and Hasegawa، نويسنده , , Takeshi and Goto، نويسنده , , Akiko and Dake، نويسنده , , Yoshinori and Kakudate، نويسنده , , Yozo، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    4
  • From page
    332
  • To page
    335
  • Abstract
    A sputtering method enhanced by an electron-beam-excited plasma having a high dissociation efficiency of nitrogen was performed for the first time. Hydrogen-free carbon nitride films were deposited by sputtering a carbon target with N2 and Ar ions and evaluated for bonding states, composition and hardness. Results from Fourier transform infrared and X-ray photoelectron spectroscopy (XPS) suggested that the deposited carbon nitride films contained CN, CN and CN bonds. From XPS analysis, the N/C atomic ratios were found to be in the range of 0.38–0.46, and the films with higher N/C atomic ratios revealed lower dynamic hardnesses.
  • Keywords
    Carbon nitride , sputtering , Hardness , Bonding
  • Journal title
    Surface and Coatings Technology
  • Serial Year
    2003
  • Journal title
    Surface and Coatings Technology
  • Record number

    1805674

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=1805674