Ion beam-induced chemical vapor deposition with hexamethyldisilane for hydrogenated amorphous silicon carbide and silicon carbonitride films

We report on the preparation of hydrogenated amorphous silicon carbide (a-SiC:H) film and silicon carbonitride (a-SiCN:H) film on Si (100) substrate by Ar ion beam-induced chemical vapor deposition (IBICVD) method attached with a bubbling system of hexamethyldisilane (HMDS). Ar ions and HMDS precursor with carrier gases of Ar or N2 were introduced onto the substrate at room temperature. Fourier transform infrared (FT-IR) spectra revealed that an elimination of an organic compound and the formation of SiC, SiN and CN bonds can be promoted by increasing ion impact energy. Smooth surface with a lower roughness has been achieved when Ar ion energy increases from 50 to 300 eV.