Formation of titanium silicide thin films on Si(100) substrate by RF plasma CVD

TiSi2 thin films were deposited on Si(100) substrate by inductively coupled RF plasma CVD at RF power ranging from 20 to 400 W. TiCl4/H2 were used as the feed gases. As the RF power increased up to 200 W at 850 °C, the morphology of the film surface and the TiSi2/Si interface improved due to the enhancement of H2 and TiCl4 dissociation into atomic species in the plasma. At higher RF powers the deposition of titanium-rich silicides such as Ti5Si3 and TiSi was observed.