Electrical conduction behavior of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by a metalorganic decomposition method

The voltage and temperature dependence of leakage currents densities of ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films using Pt electrode has been studied. The BLT thin films were prepared by metal organic decomposition (MOD) and the spin coating method onto a Pt/Ti/SiO2/Si substrate. X-Ray diffraction (XRD) studies revealed that BLT thin films were crystallized in the layered structure after annealing at 600 °C. The remanent polarization (2Pr) and coercive field of BLT films annealed at 650 °C were 25.66 μC/cm2 and 84.75 kV/cm, respectively. The BLT thin films showed good fatigue endurance up to 3.5×109 bipolar cycling at 5 V and 50 kHz. The d.c. leakage current densities of the BLT thin films as a function of applied voltage and temperature can be explained by the Schottky emission model. The Schottky barrier height of the BLT thin films was estimated to be approximately 1.06 eV.