Title of article
Distribution of implanted current on trench-shaped targets in plasma-based ion implantation and deposition
Author/Authors
Ma، نويسنده , , Xinxin and Yukimura، نويسنده , , Ken، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
88
To page
92
Abstract
The ion current at each position of a trench-shaped target was observed in plasma-based ion implantation and deposition (PBII&D), where a titanium cathodic arc at a nitrogen pressure of 8 Pa was used as a plasma source. The width and height of the trench were varied. The arc current and voltage are 80 A dc and 20 V. The ion current distribution inside trench was investigated under a strong flow of the plasma species. It was experimentally found that the ion current decreases at the bottom and at the side wall of a narrow width trench, while the target voltage increases. The distribution of ion current is caused by evolution of the ion sheath and the plasma density inside the trench.
Keywords
Langmuir Probe , PBII , Ion sheath , Cathodic arc
Journal title
Surface and Coatings Technology
Serial Year
2004
Journal title
Surface and Coatings Technology
Record number
1808309
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