Title of article :
Distribution of implanted current on trench-shaped targets in plasma-based ion implantation and deposition
Author/Authors :
Ma، نويسنده , , Xinxin and Yukimura، نويسنده , , Ken، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
88
To page :
92
Abstract :
The ion current at each position of a trench-shaped target was observed in plasma-based ion implantation and deposition (PBII&D), where a titanium cathodic arc at a nitrogen pressure of 8 Pa was used as a plasma source. The width and height of the trench were varied. The arc current and voltage are 80 A dc and 20 V. The ion current distribution inside trench was investigated under a strong flow of the plasma species. It was experimentally found that the ion current decreases at the bottom and at the side wall of a narrow width trench, while the target voltage increases. The distribution of ion current is caused by evolution of the ion sheath and the plasma density inside the trench.
Keywords :
Langmuir Probe , PBII , Ion sheath , Cathodic arc
Journal title :
Surface and Coatings Technology
Serial Year :
2004
Journal title :
Surface and Coatings Technology
Record number :
1808309
Link To Document :
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