Title of article
Hard Si–N–C coatings produced by pulsed glow discharge deposition
Author/Authors
V.T and Afanasyev-Charkin، نويسنده , , I.V and Nastasi، نويسنده , , M، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
4
From page
108
To page
111
Abstract
Hard Si–N–C films with different concentration of carbon were obtained using pulsed glow discharge deposition (PGD) at 4 kV pulsed voltage. The gases used in this study were silane (SiH4), nitrogen (N2) and acetylene (C2H2). The FTIR analysis of the films showed the existence of bonds between all components of the ternary system. The absence of separation of the structure into binary components such as silicon nitride and carbon nitride leads to the high hardness of the films.
Keywords
Plasma source ion implantation (PSII) , silicon carbide , Amorphous , Silicon nitride , Plasma immersion ion implantation (PIII)
Journal title
Surface and Coatings Technology
Serial Year
2004
Journal title
Surface and Coatings Technology
Record number
1808320
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