Author/Authors :
Li، نويسنده , , L.H and Fu، نويسنده , , Ricky K.Y and Poon، نويسنده , , R.W.Y and Kwok، نويسنده , , S.C.H and Chu، نويسنده , , P.K and Wu، نويسنده , , Y.Q. and Zhang، نويسنده , , Y.H and Cai، نويسنده , , X and Chen، نويسنده , , Q.L and Xu، نويسنده , , M، نويسنده ,
Abstract :
The plasma ion sources play a very important role in the plasma immersion ion implantation (PIII) process. In this paper, we report on our newly designed evaporation–glow discharge hybrid ion source for PIII. The high negative substrate bias not only acts as the plasma producer but also provides the implantation voltage. The sulfur vapor gas glow discharge shows that the electrons in the plasma are focused to the orifice of the inlet tube, thereby helping the ionization of the fleeing vapor gases. The sulfur depth profile confirms that this evaporation–glow discharge hybrid source is effective for materials with a low melting point and high vapor pressure.
