Author/Authors :
Ni، نويسنده , , Xianfeng and Zhu، نويسنده , , Liping and Ye، نويسنده , , Zhizhen and Zhao، نويسنده , , Zhe and Tang، نويسنده , , Haiping and Hong، نويسنده , , Wei and Zhao، نويسنده , , Binghui، نويسنده ,
Abstract :
Hexagonal GaN films exceeding 1 μm have been prepared on Si(111) substrates using high-temperature AlN buffer layers, and no cracks were observed. The FWHM of X-ray rocking curve for GaN (0002) was 560 arcsec. Strong band-edge photoluminescence (PL) was present in PL spectra. Micro-Raman spectra using shifts of E2 phonon showed that GaN films were in compressive stress, which agreed with the characterization result of X-ray lattice parameters method.
