Periodic oscillations of thin film properties with their thickness for mixed real Bi2(M+N)Te3N phases

Thin films were grown by pulsed laser deposition from Bi2Te3 target on fused silica substrates at substrate temperature of 410 °C. The reproducibility of the process was confirmed. The films were completely crystalline, textured with BiTe, Bi2Te3 and Bi3Te4 phases present. Bi/Te ratio in the films varied from 1.15 to 1.23. Films with various thicknesses were grown at the same deposition conditions in the second experiment. Film thickness varied from 20 to 350 nm. Hall mobility and the concentration of carrier of the films with different thicknesses were measured and oscillations were observed.