Author/Authors :
Uglov، نويسنده , , V.V and Anishchik، نويسنده , , V.M. and Cherenda، نويسنده , , N.N. and Sveshnikov، نويسنده , , Yu. V. and Astashynski، نويسنده , , V.M. and Kostyukevich، نويسنده , , E.A. and Kuzmitski، نويسنده , , A.M. and Askerko، نويسنده , , V.V. and Thorwath، نويسنده , , G. and Stritzker، نويسنده , , B. and Kvasov، نويسنده , , N.T and Danilyuk، نويسنده , , L.A.، نويسنده ,
Abstract :
The process of the deposition of low-dimensional structures on the silicon surface exposed to the compression plasma flow has been studied. Scanning electron microscopy, transmission electron microscopy and Rutherford backscattering spectroscopy have been used to analyze the morphology, microstructure and elemental composition of the near-surface layer. The deposited coating consists of a spherical metal containing particles with a size of 50–200 nm. Possible mechanism of the coating formation is discussed.
Keywords :
B Transmission electron microscopy , X Low-dimensional coating deposition , B Rutherford backscattering spectroscopy , C Pulsed plasma , D Silicon , B Scanning electron microscopy
