Metal-doped carbon films obtained by magnetron sputtering

Carbon films doped with Ti, V, W, Zr, Cr, and Cu were produced by magnetron sputtering. To predict the film composition, the deposition rates were systematically studied as a function of discharge power and working pressure. The achieved dopant concentrations range from 20 down to 1 at.%. The films are laterally homogeneously doped and show columnar growth. The dopant distribution is not thermally stable. After heating at 1100 K, the carbides TiC, VC, WC, ZrC, and Cr3C2 are definitely present and their grain size is on the nanometre scale. Cu segregates out. There are strong indications of the formation of carbides already during deposition.