Structure and electrical characteristics of RF magnetron sputtered MgTiO3

The crystal structure and dielectric properties of MgTiO3 films were investigated. In this article, MgTiO3 thin films were fabricated on n-type Si(100) substrates by reactive RF magnetron sputtering at various Ar/O2 mixing rations (100/0, 90/10, 80/20, 70/30), substrate temperatures (200 °C, 300 °C and 400 °C), at a RF power of 400 W and sputtering times (from 1 to 3 h). It was possible to obtain highly oriented MgTiO3 (110) thin film at a RF power of 400 W and substrate temperature of 200 °C, 300 °C and 400 °C, Ar/O2 rations (100/0, 90/10, 80/20) for 2 h, which is much lower than the bulk sintering temperature. These films were studied by choosing an RF of 400 W and various substrate temperatures. The microstructure and surface morphology of the MgTiO3 films deposited on n-Si(100) was determined by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with substrate temperature. The electrical properties were measured using C–V and current–voltage I–V measurements on metal–insulator–semiconductor (MIS) capacitor structures. As RF power of 400 W and substrate temperature of 400 °C, dielectric constant is 16.2 (f = 10 MHz).