Characterization of CaTiO3 thin film prepared by ion-beam assisted deposition

CaTiO3 thin films prepared by ion-beam assisted deposition (IBAD) was characterized with Rutherford backscattering spectrometry, grazing incident angle X-ray diffractometry and Auger electron spectroscopy. Also, bonding strength between the film and Ti substrate was determined. Films were prepared on Ti substrates by sputter-deposition of CaTiO3 target and simultaneous implantation of titanium ions accelerated with acceleration voltages of 20, 30 and 40 kV, respectively. Sequentially, some of specimens were annealed in an electric furnace at 673, 773 and 873 K in air for 7.2 ks. Composition of the as-deposited specimen approached to that of bulk CaTiO3 with the increases of acceleration voltage and/or total dose of ion implantation. After annealing, the CaTiO3 films were crystallized and the TiO2 layer was formed between the film and Ti substrate due to oxidation of Ti substrate. The temperature required to crystallize the CaTiO3 film and thickness of the TiO2 layer depended on the Ti ion-implantation conditions. Bonding strength of the CaTiO3 films to Ti substrate before annealing increased with the increase of the acceleration voltage and/or total dose of ion implantation. After annealing at 873 K, the bonding strength decreased. However, bonding strength of the specimens implanted with high acceleration voltage and/or total dose were still superior to that of the specimens without implantation and implanted with low acceleration voltage and/or total dose.