Title of article :
Ion bombardment effects on nucleation of sputtered Mo nano-crystals in Mo/B4C/Si multilayers
Author/Authors :
Patelli، نويسنده , , A. and Rigato، نويسنده , , V. and Salmaso، نويسنده , , G. and Carvalho، نويسنده , , N.J.M and De Hosson، نويسنده , , J.Th.M. and Bontempi، نويسنده , , E. and Depero، نويسنده , , L.E.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
5
From page :
143
To page :
147
Abstract :
Over recent years, the introduction of Mo/Si multilayers mirrors with different barrier layers for the interfaces has allowed increasing mirror reflectance, life and temperature stability. The effects of these very thin barrier layers on multilayer growth, such as interlayer formation and Mo crystallization, are not completely understood and deserve further study. This work shows, by using XRD and TEM analysis, that the crystallization thickness of the sputtered deposited Mo layers, when the boron carbide interlayer is present, increases from 2.0 nm to about 2.6 nm with respect to conventional Mo/Si multilayers. Furthermore some effects of ion energy bombardment on the nano-crystals formation and interlayer structure evolution have also been studied, showing an increase of preferential orientation for higher ion energies.
Keywords :
EUV multilayer mirrors , Molybdenum , Silicon , Crystal microstructure , Nucleation
Journal title :
Surface and Coatings Technology
Serial Year :
2006
Journal title :
Surface and Coatings Technology
Record number :
1812883
Link To Document :
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