Electrical properties of HfOxNy thin films deposited by PECVD

In this study, we deposited the hafnium oxy-nitride (HfOxNy) film because it shows significant reduction in leakage current density and superior thermal and electrical stability and it also exhibits the increase in crystallization temperature depending on the nitrogen concentration. HfOxNy thin films were deposited in the temperature at 500 °C on p-type Si (100) substrates by plasma enhanced chemical vapor deposition method, using hafnium tert-butoxide (Hf(OtBu)4) as the hafnium oxide precursor. A mixture of NH3 (60%) and N2 (40%) in volume ratio was used as the reactive gas. In addition, we have also investigated the relationship between leakage currents and structures of the coating layers by the effects of composition and annealing temperature.