Preparation and annealing effect on photoluminescent properties of Si/SiC thin films by alternate sputtering

Si/SiC composite films, namely, Si nano-particles in SiC matrix material, were prepared by using RF alternate sputtering technique and then annealed at high temperature from 1100 to 1400 °C. The photoluminescence (PL) phenomenon was observed in samples annealed over 1200 °C. The PL spectra show two emission bands at about 352 nm and 468 nm and the PL intensity increasing with temperature rising. The blue PL band at 468 nm is related to a quantum size effect of Si nanocrystallites, while the UV PL peak band at 352 nm may be originated from the presence of the Si–O–C bonds grown at high temperature.