• Title of article

    Particle-in-cell simulation of metal plasma flow in dual plasma deposition

  • Author/Authors

    Wang، نويسنده , , L.P. and Yu، نويسنده , , Y.H. and Wang، نويسنده , , X.F. and Tang، نويسنده , , B.Y. and Wang، نويسنده , , Y.H.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    5
  • From page
    6576
  • To page
    6580
  • Abstract
    Dual plasma deposition is a versatile method of thin film fabrication in which both gaseous and metal plasmas are co-deposited, thus having the advantageous feature of being able to form films of a wide range of elemental and compound composition. However, since the density of the metal plasma formed by a vacuum arc plasma source is non-uniform both radially and axially, the uniformity of the deposited film is in general poor. We have developed a two-dimensional particle-in-cell (PIC) model describing the spatial and temporal evolution of the metal plasma particle density and potential distributions throughout the simulation region. The results indicate that the time required for steady state distributions of density and potential to evolve is determined by the plasma streaming velocity and the axial distance of relevance. The uniformity of the deposited film is improved as the distance from source to substrate is increased. Comparison with experimental results indicates that the simulation model provides a valid description of the metal plasma flow.
  • Keywords
    Vacuum arc plasma , Simulation , Uniformity , Dual plasma deposition
  • Journal title
    Surface and Coatings Technology
  • Serial Year
    2007
  • Journal title
    Surface and Coatings Technology
  • Record number

    1816246