Title of article :
Simulation studies of radiation induced segregation in 316SS
Author/Authors :
Fernandes، نويسنده , , R.P. and Patel، نويسنده , , N.K. and Miotello، نويسنده , , A. and Kothari، نويسنده , , D.C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
3
From page :
8424
To page :
8426
Abstract :
In the present work, the theoretical model of Wiedersich et al. is used to understand the mechanism of radiation induced Cr depletion and Ni enrichment at defect sites such as grain boundaries, surfaces and interfaces in 316SS. The coupled continuity equations for solute atoms, vacancies and interstitials are numerically solved to obtain best fits to the experimental depth profile of Cr and Ni in irradiated 316SS by varying the diffusivity coefficients. Numerical values of coefficients obtained by simulation are used to understand the microscopic mechanism of atomic transport. The values of the diffusivity coefficients obtained by solving the coupled continuity equations suggest that Cr depletes by diffusing via vacancies, whereas Ni atoms enrich at the grain boundary by diffusing via interstitials.
Keywords :
316SS , Vacancy , Diffusivity , Interstitial , Radiation induced Segregation
Journal title :
Surface and Coatings Technology
Serial Year :
2007
Journal title :
Surface and Coatings Technology
Record number :
1817014
Link To Document :
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