• Title of article

    Simulation studies of radiation induced segregation in 316SS

  • Author/Authors

    Fernandes، نويسنده , , R.P. and Patel، نويسنده , , N.K. and Miotello، نويسنده , , A. and Kothari، نويسنده , , D.C.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2007
  • Pages
    3
  • From page
    8424
  • To page
    8426
  • Abstract
    In the present work, the theoretical model of Wiedersich et al. is used to understand the mechanism of radiation induced Cr depletion and Ni enrichment at defect sites such as grain boundaries, surfaces and interfaces in 316SS. The coupled continuity equations for solute atoms, vacancies and interstitials are numerically solved to obtain best fits to the experimental depth profile of Cr and Ni in irradiated 316SS by varying the diffusivity coefficients. Numerical values of coefficients obtained by simulation are used to understand the microscopic mechanism of atomic transport. The values of the diffusivity coefficients obtained by solving the coupled continuity equations suggest that Cr depletes by diffusing via vacancies, whereas Ni atoms enrich at the grain boundary by diffusing via interstitials.
  • Keywords
    316SS , Vacancy , Diffusivity , Interstitial , Radiation induced Segregation
  • Journal title
    Surface and Coatings Technology
  • Serial Year
    2007
  • Journal title
    Surface and Coatings Technology
  • Record number

    1817014