Author/Authors :
Jiménez، نويسنده , , C. and De Barros، نويسنده , , D. and Darraz، نويسنده , , A. and Deschanvres، نويسنده , , J.-L. and Rapenne، نويسنده , , L. and Chaudouët، نويسنده , , P. and Méndez Lَpez، نويسنده , , J.E. and Weiss، نويسنده , , F. and Thomachot، نويسنده , , M. and Sindzingre، نويسنده , , T. and Berthomé، نويسنده , , G. and Ferrer، نويسنده , , F.J.، نويسنده ,
Abstract :
TiO2 thin films have been deposited at low temperature using a new atmospheric pressure deposition process, which combines remote Atmospheric Pressure (AP) Plasma with Pulsed Injection Metallorganic Chemical Vapour Deposition (PIMOCVD). The effects of post-discharge plasma and deposition parameters have been studied with respect to the deposition kinetics, morphology, and microstructure of TiO2 films. It is shown that well-crystallised TiO2 anatase films can be obtained at a temperature of only 275 °C.
Keywords :
Injection MOCVD , Atmospheric Plasma , PECVD , Anatase , Titanium oxide
