Author/Authors :
Schulz، نويسنده , , Stephan and Fahrenholz، نويسنده , , Sonja and Schuchmann، نويسنده , , Daniella and Kuczkowski، نويسنده , , Andreas and Assenmacher، نويسنده , , Wilfried and Reilmann، نويسنده , , Frank and Bahlawane، نويسنده , , Naoufal and Kohse-Hِinghaus، نويسنده , , Katharina، نويسنده ,
Abstract :
Tailor-made single source precursors of the type [R2GaSbR′2]x (R, R′ = alkyl) have been prepared by a novel synthetic pathways. According to their very low vapor pressures, a specifically designed HV-MOCVD reactor was built, which can be used for the deposition of GaSb material films. The influence of several process parameters such as substrate temperature and reactor geometry on the quality of the resulting films will be discussed.
