Author/Authors :
Gaskell، نويسنده , , Jeffrey M. and Jones، نويسنده , , Anthony C. and Black، نويسنده , , Kate and Chalker، نويسنده , , Paul R. and Leese، نويسنده , , Thomas and Kingsley، نويسنده , , Andrew and Odedra، نويسنده , , Rajesh and Heys، نويسنده , , Peter N.، نويسنده ,
Abstract :
Thin films of ZrO2 have been deposited by liquid injection MOCVD and ALD using the cyclopentadienyl-based Zr precursors [(MeCp)2ZrMe(OMe)] and [(MeCp)2ZrMe(OBut)]. Analysis by X-ray diffraction showed that films grown at low temperature (300 °C) by ALD were amorphous, whist films deposited at higher temperature (600 °C) by MOCVD exist in the tetragonal phase. Auger electron spectroscopy showed that residual carbon (1.4–7.0 at.%) was present in the oxide films and that the MOCVD-grown films contained more carbon contamination than those grown by ALD.
Keywords :
MOCVD , ALD , zirconium dioxide , Cyclopentadienyl–Zr precursors
