Author/Authors :
Sacilotti، نويسنده , , M. and Cheyssac، نويسنده , , P. and Patriarche، نويسنده , , G. and Decobert، نويسنده , , J. and Chiaramonte، نويسنده , , Th. and Cardoso، نويسنده , , L.P. and Pillis، نويسنده , , M.F. and Brasil، نويسنده , , M.J. and Iikawa، نويسنده , , F. and Nakaema، نويسنده , , M. and Lacroute، نويسنده , , Y. and Vial، نويسنده , , J.C. and Donatini، نويسنده , , F.، نويسنده ,
Abstract :
This paper presents the growth and characterization of three-dimensional structures using metal-organic (or organometallic) chemical precursors like M(CH3)3, where M is a metal. Their morphology depends principally on growth temperature and conditions at the surface of the substrate. These 3D structures can be separated into two classes: i) one with (Ga, Al, In) metallic alloys shaped as sphere, sceptre or cylinder and a carbon membrane covering the alloy; ii) the other with semiconductor or oxide nanowires capped by a metallic sphere. The metal-organic precursors can be seen as catalysts molecules that grow semiconductors with micro and nanostructures similar to the role of gold particles used to grow nanowires in the VLS mechanism. We present the MOCVD growth of Ga2O3, CuGaxOy and (Ga,In)P nanowires using the metal-organic precursors on metallic or metal containing substrates.
Keywords :
nanostructured materials , Trimethyl-gallium , nanocrystals , MOCVD
