Deposition of highly pure ruthenium thin films with a new metal-organic precursor

Ruthenium films of high purity were obtained by using a new precursor, dubbed CHORUS. This metal-organic precursor, liquid down to − 50 °C, of low viscosity, can be fully vaporized without leaving residues at 80 °C. Ruthenium CVD films were obtained at temperatures of 250 °C and above using hydrogen as a reducing co-reactant. The CHORUS process has the characteristic of enabling deposition of pure ruthenium films without oxidizing the layer upon which the ruthenium film is grown. The obtained films show good adherence on many different types of substrates and no incubation times were observed for the depositions.