Author/Authors :
A. Bartasyte، نويسنده , , A. and Bouregba، نويسنده , , R. and Dogheche، نويسنده , , E. and Boudard، نويسنده , , M. and Poullain، نويسنده , , G. and Chaix-Pluchery، نويسنده , , O. and Jimenez، نويسنده , , C. and Plausinaitiene، نويسنده , , V. and Remiens، نويسنده , , D. and Abrutis، نويسنده , , A. and Saltyte، نويسنده , , Z. and Weiss، نويسنده , , F.، نويسنده ,
Abstract :
The influence of deposition conditions (pressure, growth rate, solution concentration, etc.) on the growth of ferroelectric PbTiO3 films by pulsed liquid injection MOCVD was examined. Pb(thd)2 and Ti(OiPr)2(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) dissolved in toluene were used as precursors. Films were grown on LaAlO3 (001) substrates for deposition process optimisation. PbTiO3/La1 − xSrxMnO3/LaAlO3 heterostructures were elaborated at optimized deposition conditions. The microstructure of the heterostructures was characterized by X-ray Diffraction and by Raman spectroscopy. Pt/PbTiO3/La1 − xSrxMnO3/LaAlO3 structures were used for ferroelectric, dielectric and piezoelectric characterisations of PbTiO3 films.
