Title of article
Resistive switching properties of sol–gel derived Mo-doped SrZrO3 thin films
Author/Authors
Lin، نويسنده , , Chih-Yang and Lin، نويسنده , , Chun-Chieh and Huang، نويسنده , , Chun-Hsing and Lin، نويسنده , , Chen-Hsi and Tseng، نويسنده , , Tseung-Yuen Tseng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
4
From page
1319
To page
1322
Abstract
Hysteretic I–V characteristics of the SrZrO3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 104 s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application.
Keywords
Sol–gel , Nonvolatile memory , Resistive switching , SrZrO3
Journal title
Surface and Coatings Technology
Serial Year
2007
Journal title
Surface and Coatings Technology
Record number
1818082
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