Ion-plasma protective coatings of CdTe surface for X- and gamma-ray detectors

Comparative study of I–V characteristics of “metal-semiconductor-metal” structures without coatings and with protective coatings is presented. Regimes for radio frequency deposition of dielectric coatings on the surface of pixeled Schottky junction based on Cl-doped CdTe single crystals with high resistivity (107–1010) Ω·cm were determined. In particular, the films with composition of (TeO2)x–(SiO2)1 − x have demonstrated high isolation properties. Possible applications of new CdTe pixeled detectors with the studied protective coatings for high resolution spectrometry in X- and gamma-ray sensor devices are discussed.