Co-deposition process of RF-Sputtering and RF-PECVD of copper/carbon nanocomposite films

Nanoparticle copper/carbon composite films were prepared by co-deposition of RF-Sputtering and RF-PECVD method from acetylene gas and copper target. We investigate deposition process in the region where by changing pressure, the process converts to physical sputtering mode in constant power regime and at a critical pressure between 1.5 to 3 Pa. The estimated value of mean ion energy at this critical point of pressure is close to threshold energy of physical sputtering of copper atoms by acetylene ions. By utilizing this property and by setting initial pressure from 1.3 to 6.6 Pa, nanoparticles copper/carbon composite films were grown with different copper content. The Copper content of our films was obtained by Rutherford Back Scattering (RBS) and it varied from 2% to 97%. The copper content of the surface was obtained by X-ray Photoelectron Spectroscopy (XPS). The results of XPS at different stages of the growth and copper oxidization confirm our suggested mechanism of deposition. Atomic force microscopy (AFM) image and X-ray diffraction (XRD) indicated that copper nanoparticles were formed in our films.