The preparation of oxygenated fullerene film and its photoelectrical properties

In studies of photoelectrochemical properties of C60 thin films, researchers have pointed out that the presence of oxygen in C60 thin films causes problems in electron and hole drift mobilities as well as in the recombination lifetime at a moderate steady-state illumination level; therefore, it is necessary to understand the characterization of photoelectronic and transport processes in oxygenated C60 thin films. From previous studies, researchers have pointed out that C60 fullerene thin film has the n-type property. Therefore, by using oxygenated C60 fullerene thin film, we prepared p–n junctions (C60/p-Si) in order to obtain its photoelectronic conversion properties. We analyzed the conductivity, the I–V curves, the open-circuit voltage and close-circuit current versus film thickness, and the fill factor and conversion efficiency. esult, we found the photoelectronic conversion properties of the p–n junctions (C60/p-Si). However, the photoelectronic properties of n-type C60 fullerene thin film are lower than the characteristics of other photoelectronic devices. Those that have low photoelectronic conversion properties have the possibility of being good photoelectronic devices. Therefore, C60 fullerene thin film can be applied to photoelectronic device fields.