Author/Authors :
Kaki، نويسنده , , H. and Tomyo، نويسنده , , A. and Takahashi، نويسنده , , E. and Hayashi، نويسنده , , T. and Ogata، نويسنده , , K. and Ebe، نويسنده , , A. and Takenaka، نويسنده , , K. and Setsuhara، نويسنده , , Y.، نويسنده ,
Abstract :
Hydrogenated microcrystalline silicon (µc-Si:H) films were prepared by inductive coupled plasma chemical vapor deposition (ICP-CVD) system using internal low inductance antenna (LIA) units on various under layer composed of Si, O, and N. The resultant changes in the crystallinity of the µc-Si:H films were investigated using Raman scattering spectroscopy and the details of the interface structure were observed by high resolution transmission electron microscope. We had found that µc-Si:H film on the SiNx layer treated by O2 plasma has good interface quality. The highly crystallized µc-Si:H films with no amorphous incubation layer at interface of Si/SiNx could be directly deposited on the SiNx layer.
Keywords :
Inductive coupled plasma , Thin films , chemical vapor deposition , microcrystalline silicon
