GaN-core/SiOx-sheath nanowires

We have fabricated GaN-core/SiOx-sheath nanowires, sheathing the core MgO nanowires by sputtering with Si target. The product has wire-like morphology, regardless of SiOx-sheathing and subsequent annealing. EDX elemental mapping results have coincided with what can be expected for the SiOx-coated GaN nanowires. The core nanowires correspond to a hexagonal GaN structure, whereas the sheath layer is amorphous. Gaussian fitting analysis on the photoluminescence spectra of GaN-core/SiOx-sheath nanowires have exhibited two emission bands peaked at 2.4 eV and 2.9 eV, respectively. We observed that the relative intensity of 2.9 eV-peak to 2.4 eV-peak was increased by the thermal annealing.